Infineon, Type N-Channel IGBT, 50 A 650 V, 3-Pin TO-263, Surface

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Subtotal (1 reel of 1000 units)*

Kr. 15 199,00

(exc. VAT)

Kr. 18 999,00

(inc. VAT)

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1000 +Kr. 15,199Kr. 15 199,00

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RS Stock No.:
218-4389
Mfr. Part No.:
IGB50N65H5ATMA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

50A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Number of Transistors

1

Maximum Power Dissipation Pd

270W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 ±30 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Width

9.45 mm

Standards/Approvals

JEDEC47/20/22

Height

4.57mm

Series

High Speed Fifth Generation

Length

10.31mm

Automotive Standard

No

The Infineon TRENCHSTOP IGBT5 technology redefines best-in-class IGBT resulting in lower junction and case temperature leading to higher device reliability by providing unmatched performance in terms of efficiency for hard switching applications. It has collector emitter voltage of 650 V and collector current of 80 A.

Higher power density design

50V increase in the bus voltage possible without compromising reliability

Mild positive temperature coefficient

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