Infineon IGB50N65H5ATMA1, Type N-Channel IGBT, 50 A 650 V, 3-Pin TO-263, Surface
- RS Stock No.:
- 218-4390
- Mfr. Part No.:
- IGB50N65H5ATMA1
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 218-4390
- Mfr. Part No.:
- IGB50N65H5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 270W | |
| Number of Transistors | 1 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.31mm | |
| Width | 9.45 mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | High Speed Fifth Generation | |
| Height | 4.57mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 270W | ||
Number of Transistors 1 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Gate Emitter Voltage VGEO ±20 ±30 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.31mm | ||
Width 9.45 mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Series High Speed Fifth Generation | ||
Height 4.57mm | ||
Automotive Standard No | ||
The Infineon TRENCHSTOP IGBT5 technology redefines best-in-class IGBT resulting in lower junction and case temperature leading to higher device reliability by providing unmatched performance in terms of efficiency for hard switching applications. It has collector emitter voltage of 650 V and collector current of 80 A.
Higher power density design
50V increase in the bus voltage possible without compromising reliability
Mild positive temperature coefficient