STMicroelectronics, Type N-Channel IGBT, 115 A 650 V, 4-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

Kr. 1 941,48

(exc. VAT)

Kr. 2 426,85

(inc. VAT)

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30 - 30Kr. 64,716Kr. 1 941,48
60 +Kr. 61,479Kr. 1 844,37

*price indicative

RS Stock No.:
206-6063
Mfr. Part No.:
STGW75H65DFB2-4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

115A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

357W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

4

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

15.9mm

Height

5.1mm

Standards/Approvals

RoHS

Width

21.1 mm

Series

STG

Automotive Standard

No

The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature: TJ = 175 °C

Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A

Very fast and soft recovery co-packaged diode

Minimized tail current

Tight parameter distribution

Low thermal resistance

Positive VCE(sat) temperature coefficient

Excellent switching performance thanks to the extra driving kelvin pin

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