Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO-8 SIRC06DP-T1-GE3

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Width

5mm

Number of Elements per Chip

2

Typical Gate Charge @ Vgs

38.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5.99mm

Minimum Operating Temperature

-55 °C

Height

1.07mm

Forward Diode Voltage

0.7V