Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO-8 Vishay Siliconix SIRC06DP-T1-GE3

RS Stock No.:: 178-3940
Mfr. Part No.:: SIRC06DP-T1-GE3
Brand:: Vishay Siliconix

Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO-8 Vishay Siliconix SIRC06DP-T1-GE3

Price Each (In a Pack of 25)**

Kr. 10,898

(exc. VAT)

Kr. 13,622

(inc. VAT)

Available to back order for despatch when stock is available*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over kr 500,00

Units	Per unit	Per Pack**
25 +	Kr. 10,898	Kr. 272,45

**price indicative

RS Stock No.:: 178-3940
Mfr. Part No.:: SIRC06DP-T1-GE3
Brand:: Vishay Siliconix

Datasheet

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	60 A
Maximum Drain Source Voltage	30 V
Series	TrenchFET
Package Type	PowerPAK SO-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	50 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +20 V
Length	5.99mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	38.5 nC @ 10 V
Number of Elements per Chip	2
Width	5mm
Forward Diode Voltage	0.7V
Height	1.07mm
Minimum Operating Temperature	-55 °C