Vishay SiS128LDN Type N-Channel MOSFET, 33.7 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SiS128LDN-T1-GE3
- RS Stock No.:
- 188-5153
- Mfr. Part No.:
- SiS128LDN-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.87 06
(exc. VAT)
Kr.108 82
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 28. april 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 8,706 | Kr. 87,06 |
| 100 - 240 | Kr. 8,283 | Kr. 82,83 |
| 250 - 490 | Kr. 7,413 | Kr. 74,13 |
| 500 - 990 | Kr. 5,308 | Kr. 53,08 |
| 1000 + | Kr. 4,187 | Kr. 41,87 |
*price indicative
- RS Stock No.:
- 188-5153
- Mfr. Part No.:
- SiS128LDN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33.7A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SiS128LDN | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 39W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.15mm | |
| Width | 3.15 mm | |
| Standards/Approvals | No | |
| Height | 1.07mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33.7A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SiS128LDN | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 39W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.15mm | ||
Width 3.15 mm | ||
Standards/Approvals No | ||
Height 1.07mm | ||
Automotive Standard No | ||
N-Channel 80 V (D-S) MOSFET.
TrenchFET® Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
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