Vishay SiSS32ADN Type N-Channel MOSFET, 63 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SiSS32ADN-T1-GE3

Subtotal (1 pack of 10 units)*

Kr. 79,07

(exc. VAT)

Kr. 98,84

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 4 730 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 +Kr. 7,907Kr. 79,07

*price indicative

Packaging Options:
RS Stock No.:
210-5014
Mfr. Part No.:
SiSS32ADN-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

63A

Maximum Drain Source Voltage Vds

80V

Series

SiSS32ADN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

24nC

Maximum Power Dissipation Pd

65.7W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Length

3.4mm

Height

0.83mm

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 80 V (D-S) MOSFET has PowerPAK 1212-8S package type with 63 A drain current.

TrenchFET Gen IV power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy