Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 26 A, 600 V Enhancement, 3-Pin TO-263

View all MOSFETs

Subtotal (1 reel of 1000 units)*

Kr.15 412 00 

(exc. VAT)

Kr.19 265 00 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 04. mai 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
1000 +Kr. 15,412Kr. 15 412,00

*price indicative

RS Stock No.:
214-4367
Mfr. Part No.:
IPB60R120P7ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

600V

Series

600V CoolMOS P7

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

36nC

Maximum Power Dissipation Pd

95W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

4.5mm

Length

10.02mm

Width

9.27 mm

Automotive Standard

No

This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

Related links