Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 26 A, 600 V Enhancement, 3-Pin TO-263 IPB60R120P7ATMA1
- RS Stock No.:
- 214-4368
- Mfr. Part No.:
- IPB60R120P7ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr. 127,94
(exc. VAT)
Kr. 159,925
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | Kr. 25,588 | Kr. 127,94 |
| 25 - 45 | Kr. 23,054 | Kr. 115,27 |
| 50 - 120 | Kr. 21,494 | Kr. 107,47 |
| 125 - 245 | Kr. 19,958 | Kr. 99,79 |
| 250 + | Kr. 18,68 | Kr. 93,40 |
*price indicative
- RS Stock No.:
- 214-4368
- Mfr. Part No.:
- IPB60R120P7ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | 600V CoolMOS P7 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 95W | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.02mm | |
| Standards/Approvals | No | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series 600V CoolMOS P7 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 95W | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.02mm | ||
Standards/Approvals No | ||
Height 4.5mm | ||
Automotive Standard No | ||
This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.
It has rugged body diode
Integrated RG reduces MOSFET oscillation sensitivity
Related links
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 IPB60R360P7ATMA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 IPB60R280P7ATMA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 IPD60R180P7ATMA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R060P7XKSA1