Infineon CoolMOS CSFD Type N-Channel MOSFET, 360 A, 650 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 30 units)*

Kr.2 561 64 

(exc. VAT)

Kr.3 202 05 

(inc. VAT)

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  • Plus 30 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Tube*
30 +Kr. 85,388Kr. 2 561,64

*price indicative

RS Stock No.:
219-6016
Mfr. Part No.:
IPW60R024CFD7XKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

360A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS CSFD

Package Type

TO-247

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

183nC

Maximum Power Dissipation Pd

320W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

5.21mm

Length

16.13mm

Width

21.1 mm

Automotive Standard

No

The Infineon CoolMOS CFD7 Superjunction MOSFET IPW60R024CFD7 in 600V is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

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