Infineon CoolMOS CSFD Type N-Channel MOSFET, 360 A, 650 V Enhancement, 3-Pin TO-247 IPW60R024CFD7XKSA1
- RS Stock No.:
- 219-6017
- Mfr. Part No.:
- IPW60R024CFD7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
Kr.141 16
(exc. VAT)
Kr.176 45
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 54 unit(s) shipping from 29. desember 2025
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Units | Per unit |
|---|---|
| 1 - 4 | Kr. 141,16 |
| 5 - 9 | Kr. 124,24 |
| 10 - 24 | Kr. 115,77 |
| 25 - 49 | Kr. 108,68 |
| 50 + | Kr. 100,21 |
*price indicative
- RS Stock No.:
- 219-6017
- Mfr. Part No.:
- IPW60R024CFD7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 360A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS CSFD | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 320W | |
| Typical Gate Charge Qg @ Vgs | 183nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Height | 5.21mm | |
| Width | 21.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 360A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS CSFD | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 320W | ||
Typical Gate Charge Qg @ Vgs 183nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Height 5.21mm | ||
Width 21.1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS CFD7 Superjunction MOSFET IPW60R024CFD7 in 600V is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Related links
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