STMicroelectronics Type N-Channel MOSFET, 6 A, 600 V Enhancement, 3-Pin TO-252 STD9N60M6

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Subtotal (1 pack of 10 units)*

Kr.91 18 

(exc. VAT)

Kr.113 98 

(inc. VAT)

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Per Pack*
10 - 10Kr. 9,118Kr. 91,18
20 - 90Kr. 8,866Kr. 88,66
100 - 240Kr. 8,637Kr. 86,37
250 - 490Kr. 8,42Kr. 84,20
500 +Kr. 8,214Kr. 82,14

*price indicative

Packaging Options:
RS Stock No.:
225-0672
Mfr. Part No.:
STD9N60M6
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

750mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

25 V

Typical Gate Charge Qg @ Vgs

10nC

Maximum Power Dissipation Pd

76W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The STMicroelectronics new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviours available, as well as a user-friendly experience for maximum end-application efficiency.

Reduced switching losses

Lower RDS(on) per area vs previous generation

Low gate input resistance

100% avalanche tested

Zener-protected

584

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