onsemi UniFET II Type N-Channel MOSFET, 2 A, 500 V N, 3-Pin SOT-223

Subtotal (1 reel of 4000 units)*

Kr.20 372 00 

(exc. VAT)

Kr.25 464 00 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 13. april 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
4000 +Kr. 5,093Kr. 20 372,00

*price indicative

RS Stock No.:
229-6326
Mfr. Part No.:
FDT4N50NZU
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

500V

Package Type

SOT-223

Series

UniFET II

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

N

Typical Gate Charge Qg @ Vgs

9.1nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

25 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Height

1.7mm

Standards/Approvals

No

Width

3.7 mm

Length

6.7mm

Automotive Standard

No

The ON Semiconductor UniFET II high voltage MOSFET based on advanced planar stripe and DMOS technology. This advanced MOSFET has the smallest on state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction, flat panel display, TV power, ATX and electronic lamp ballasts.

Ultra low gate charge

100% avalanche tested

Pb−free

Halogen free

RoHS compliant

Related links