onsemi UniFET II Type N-Channel MOSFET, 2 A, 500 V N, 3-Pin SOT-223 FDT4N50NZU
- RS Stock No.:
- 229-6327
- Mfr. Part No.:
- FDT4N50NZU
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.107 31
(exc. VAT)
Kr.134 14
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 2 710 unit(s) shipping from 19. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 10,731 | Kr. 107,31 |
| 100 - 240 | Kr. 9,255 | Kr. 92,55 |
| 250 - 490 | Kr. 8,019 | Kr. 80,19 |
| 500 - 990 | Kr. 7,058 | Kr. 70,58 |
| 1000 + | Kr. 6,406 | Kr. 64,06 |
*price indicative
- RS Stock No.:
- 229-6327
- Mfr. Part No.:
- FDT4N50NZU
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | UniFET II | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 9.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Width | 3.7 mm | |
| Height | 1.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series UniFET II | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 9.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Width 3.7 mm | ||
Height 1.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor UniFET II high voltage MOSFET based on advanced planar stripe and DMOS technology. This advanced MOSFET has the smallest on state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction, flat panel display, TV power, ATX and electronic lamp ballasts.
Ultra low gate charge
100% avalanche tested
Pb−free
Halogen free
RoHS compliant
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