Infineon IPD Type P-Channel MOSFET, 13.7 A, 100 V Enhancement, 3-Pin TO-252 IPD19DP10NMATMA1

View all MOSFETs

Subtotal (1 reel of 2500 units)*

Kr.10 377 50 

(exc. VAT)

Kr.12 972 50 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 25. mai 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2500 +Kr. 4,151Kr. 10 377,50

*price indicative

RS Stock No.:
235-4856
Mfr. Part No.:
IPD19DP10NMATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

13.7A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

186mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.2V

Typical Gate Charge Qg @ Vgs

-36nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

83W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

6.22 mm

Height

2.41mm

Length

6.73mm

Automotive Standard

No

The Infineon OptiMOS™ P-Channel MOSFETs 100V in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.

Available in 4 different packages

Wide range

Normal level and logic level availability

Ideal for high and low switching frequency

Easy Interface to MCU

Low design complexity

Related links