Infineon IPD Type P-Channel MOSFET, 9 A, 150 V Enhancement, 3-Pin TO-252 IPD42DP15LMATMA1

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Subtotal (1 reel of 2500 units)*

Kr.13 097 50 

(exc. VAT)

Kr.16 372 50 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 5,239Kr. 13 097,50

*price indicative

RS Stock No.:
235-4858
Mfr. Part No.:
IPD42DP15LMATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

150V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

420mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.2V

Maximum Power Dissipation Pd

83W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

-43nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Width

6.22 mm

Standards/Approvals

No

Length

6.73mm

Height

2.41mm

Automotive Standard

No

The Infineon OptiMOS™ P-Channel MOSFETs 150V in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-Channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.

Ideal for high and low switching frequency

Avalanche ruggedness

Industry standard footprint surface mount package

Robust, reliable performance

Increased security of supply

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