Infineon IPD Type P-Channel MOSFET, 9 A, 150 V Enhancement, 3-Pin TO-252 IPD42DP15LMATMA1
- RS Stock No.:
- 235-4859
- Mfr. Part No.:
- IPD42DP15LMATMA1
- Brand:
- Infineon
Add 20 more to save Kr. 45,70
View bulk pricing optionsSubtotal (1 pack of 2 units)*
Kr. 45,87
(exc. VAT)
Kr. 57,34
(inc. VAT)
FREE delivery for online orders over 750,00 kr
- 2 294 unit(s) ready to ship
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 2 - 18 | Kr. 22,935 | Kr. 45,87 | - |
| 20 - 48 | Kr. 20,65 | Kr. 41,30 | Kr. 45,70 |
| 50 - 98 | Kr. 19,275 | Kr. 38,55 | Kr. 183,00 |
| 100 - 198 | Kr. 17,845 | Kr. 35,69 | Kr. 509,00 |
| 200 + | Kr. 16,59 | Kr. 33,18 | Kr. 1 269,00 |
*price indicative
- RS Stock No.:
- 235-4859
- Mfr. Part No.:
- IPD42DP15LMATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 420mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | -43nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 420mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs -43nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Operating Temperature 175°C | ||
Width 6.22mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Automotive Standard No | ||
Related links
- Infineon IPD Type P-Channel MOSFET 150 V Enhancement, 3-Pin TO-252 IPD42DP15LMATMA1
- Infineon IPD Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IPD19DP10NMATMA1
- Infineon IPD Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IPD18DP10LMATMA1
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252 IPD50P04P4L11ATMA2
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IPD85P04P4L06ATMA2
- Infineon IPD Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252 IPD90P03P404ATMA2
- Infineon IPD Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IPD11DP10NMATMA1
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252 IPD90P04P4L04ATMA2
