Infineon HEXFET Type N-Channel MOSFET, 120 A, 75 V TO-263 IRFB3307PBF

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Subtotal (1 pack of 2 units)*

Kr.56 44 

(exc. VAT)

Kr.70 56 

(inc. VAT)

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  • Plus 1 000 unit(s) shipping from 09. februar 2026
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Units
Per unit
Per Pack*
2 - 18Kr. 28,22Kr. 56,44
20 - 48Kr. 25,455Kr. 50,91
50 - 98Kr. 23,74Kr. 47,48
100 - 198Kr. 22,25Kr. 44,50
200 +Kr. 20,535Kr. 41,07

*price indicative

Packaging Options:
RS Stock No.:
257-5799
Mfr. Part No.:
IRFB3307PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-263

Series

HEXFET

Mount Type

PCB

Maximum Drain Source Resistance Rds

6.3mΩ

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

200W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard through-hole power package

High-current rating


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