Infineon HEXFET Type N-Channel MOSFET, 16 A, 100 V Enhancement, 3-Pin TO-251 IRFU3910PBF

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Subtotal (1 pack of 10 units)*

Kr.63 51 

(exc. VAT)

Kr.79 39 

(inc. VAT)

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Per Pack*
10 - 90Kr. 6,351Kr. 63,51
100 - 240Kr. 6,029Kr. 60,29
250 - 490Kr. 5,789Kr. 57,89
500 - 990Kr. 5,526Kr. 55,26
1000 +Kr. 3,489Kr. 34,89

*price indicative

Packaging Options:
RS Stock No.:
262-6776
Mfr. Part No.:
IRFU3910PBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-251

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

115mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

52W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

29.3nC

Maximum Operating Temperature

175°C

Width

6.22 mm

Height

2.39mm

Standards/Approvals

RoHS

Length

6.73mm

Automotive Standard

No

Distrelec Product Id

304-41-680

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. It has ultra low on-resistance. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

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