Infineon HEXFET Type N-Channel MOSFET, 16 A, 100 V Enhancement, 3-Pin TO-251 IRFU3910PBF
- RS Stock No.:
- 262-6776
- Distrelec Article No.:
- 304-41-680
- Mfr. Part No.:
- IRFU3910PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.69 21
(exc. VAT)
Kr.86 51
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 40 unit(s) shipping from 16. februar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 6,921 | Kr. 69,21 |
| 100 - 240 | Kr. 6,578 | Kr. 65,78 |
| 250 - 490 | Kr. 6,303 | Kr. 63,03 |
| 500 - 990 | Kr. 6,017 | Kr. 60,17 |
| 1000 + | Kr. 3,798 | Kr. 37,98 |
*price indicative
- RS Stock No.:
- 262-6776
- Distrelec Article No.:
- 304-41-680
- Mfr. Part No.:
- IRFU3910PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-251 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 115mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 52W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 29.3nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.39mm | |
| Width | 6.22 mm | |
| Standards/Approvals | RoHS | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-251 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 115mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 52W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 29.3nC | ||
Maximum Operating Temperature 175°C | ||
Height 2.39mm | ||
Width 6.22 mm | ||
Standards/Approvals RoHS | ||
Length 6.73mm | ||
Automotive Standard No | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. It has ultra low on-resistance. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Fast switching
Fully avalanche rated
Related links
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- Infineon HEXFET Type N-Channel MOSFET 110 V Enhancement, 3-Pin TO-252
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