Microchip VN3205 Type N-Channel MOSFET, 1.5 A, 50 V MOSFET, 3-Pin SOT-89 VN3205N8-G
- RS Stock No.:
- 264-8947
- Mfr. Part No.:
- VN3205N8-G
- Brand:
- Microchip
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.94 04
(exc. VAT)
Kr.117 55
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 1 910 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 18,808 | Kr. 94,04 |
| 50 - 95 | Kr. 14,162 | Kr. 70,81 |
| 100 - 245 | Kr. 10,112 | Kr. 50,56 |
| 250 - 995 | Kr. 9,884 | Kr. 49,42 |
| 1000 + | Kr. 9,656 | Kr. 48,28 |
*price indicative
- RS Stock No.:
- 264-8947
- Mfr. Part No.:
- VN3205N8-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SOT-89 | |
| Series | VN3205 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | MOSFET | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SOT-89 | ||
Series VN3205 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode MOSFET | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Related links
- Microchip N-Channel MOSFET, 50 V SOT-89 VN3205N8-G
- Microchip N-Channel MOSFET, 240 V SOT-89 TN2524N8-G
- Microchip DN3525 N-Channel MOSFET 250 V Depletion, 3-Pin SOT-89 DN3525N8-G
- Microchip N-Channel MOSFET, 100 V SOT-23 VN2110K1-G
- Microchip N-Channel MOSFET, 350 V SOT-23 TN5335K1-G
- Microchip N-Channel MOSFET, 300 V SOT-23 TN2130K1-G
- Microchip N-Channel MOSFET, 240 V SOT-23 TN2124K1-G
- ROHM RU1J002YN N-Channel MOSFET 50 V, 3-Pin SOT-323 RU1J002YNTCL