Vishay EF Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-220 SIHF085N60EF-GE3
- RS Stock No.:
- 279-9909
- Mfr. Part No.:
- SIHF085N60EF-GE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
Kr. 70,24
(exc. VAT)
Kr. 87,80
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- 1 000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | Kr. 70,24 |
| 10 - 24 | Kr. 69,10 |
| 25 - 99 | Kr. 67,50 |
| 100 + | Kr. 63,26 |
*price indicative
- RS Stock No.:
- 279-9909
- Mfr. Part No.:
- SIHF085N60EF-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | EF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 35W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series EF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 35W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Length 10.1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series EF MOSFET, 600V Drain-Source Voltage, 13A Continuous Drain Current - SIHF085N60EF-GE3
This MOSFET is a high-voltage N-channel transistor designed for power switching in industrial and electronic systems. It is supplied in a through-hole TO-220 package for straightforward mounting and thermal management, and is intended for use where robust voltage handling and substantial current capability are required.
Features and Benefits:
• 600V drain rating enables high-voltage switching applications • 13A continuous drain current supports substantial load currents • 0.084Ω Rds(on) reduces conduction losses under load • 35W power dissipation allows sustained power handling • ±30V gate tolerance permits wide drive voltage margins • 63nC typical gate charge gives predictable switching behaviour
Applications
• Suitable for industrial motor drive switching stages • Ideal for power supplies and high-voltage converters • Used for inverter and UPS power switching modules • Can be used for inductive load control in automation systems
What temperature range can it operate within?
It is rated to operate from -55°C up to a maximum of 150°C, allowing deployment in elevated temperature environments.
How many pins does the component present and what is the mount type?
It has three pins and is configured for through-hole mounting to facilitate secure board attachment and heat-sink interfacing.
What package form and power handling should be expected when fitting a heatsink?
The TO-220 package with 35W maximum power dissipation is suited to heat-sink attachment for improved thermal performance in continuous operation.
Is this device compliant with common environmental restrictions?
It meets RoHS requirements, indicating compliance with specified hazardous substance limits.
How does the gate charge affect switching design?
A typical gate charge of 63nC helps determine driver current requirements and switching transition times for efficient gate-drive design.
Related links
- Vishay SIHF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 SIHF085N60EF-GE3
- Vishay SIHF Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SIHF074N65E-GE3
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R180C7XKSA1
- STMicroelectronics MDmesh 13 A 3-Pin TO-220 STP13NK60Z
- STMicroelectronics MDmesh 13 A 3-Pin TO-220
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 STP18NM60N
- STMicroelectronics MDmesh 13 A 3-Pin TO-220 STP13NK60ZFP