Vishay SIHF Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-220 SIHF085N60EF-GE3

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Subtotal (1 unit)*

Kr.67 38 

(exc. VAT)

Kr.84 22 

(inc. VAT)

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1 - 9Kr. 67,38
10 - 24Kr. 66,12
25 - 99Kr. 64,75
100 +Kr. 60,63

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Packaging Options:
RS Stock No.:
279-9909
Mfr. Part No.:
SIHF085N60EF-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

SIHF

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.084Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

35W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

63nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

10.1mm

Automotive Standard

No

The Vishay MOSFET is a E series power MOSFET with Fast body diode and the transistor in it is made up of material known as silicon.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance

Avalanche energy rated

Reduced switching and conduction losses

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