Vishay SIHG Type N-Channel MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-247AC SIHG155N60EF-GE3
- RS Stock No.:
- 279-9912
- Mfr. Part No.:
- SIHG155N60EF-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.114 29
(exc. VAT)
Kr.142 862
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 470 unit(s) shipping from 05. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 2 | Kr. 57,145 | Kr. 114,29 |
| 4 - 8 | Kr. 56,00 | Kr. 112,00 |
| 10 - 28 | Kr. 54,80 | Kr. 109,60 |
| 30 - 98 | Kr. 53,655 | Kr. 107,31 |
| 100 + | Kr. 51,71 | Kr. 103,42 |
*price indicative
- RS Stock No.:
- 279-9912
- Mfr. Part No.:
- SIHG155N60EF-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIHG | |
| Package Type | TO-247AC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.159Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Power Dissipation Pd | 179W | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.7mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIHG | ||
Package Type TO-247AC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.159Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Power Dissipation Pd 179W | ||
Maximum Operating Temperature 150°C | ||
Length 15.7mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a E series power MOSFET with Fast body diode and the transistor in it is made up of material known as silicon.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance
Avalanche energy rated
Reduced switching and conduction losses
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