Vishay SiR Type P-Channel MOSFET, 90.9 A, 60 V Enhancement, 8-Pin SO-8 SIR5607DP-T1-RE3
- RS Stock No.:
- 279-9951
- Mfr. Part No.:
- SIR5607DP-T1-RE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.73 79
(exc. VAT)
Kr.92 238
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 5 976 unit(s) shipping from 01. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | Kr. 36,895 | Kr. 73,79 |
| 50 - 98 | Kr. 33,35 | Kr. 66,70 |
| 100 - 248 | Kr. 29,745 | Kr. 59,49 |
| 250 - 998 | Kr. 29,06 | Kr. 58,12 |
| 1000 + | Kr. 28,485 | Kr. 56,97 |
*price indicative
- RS Stock No.:
- 279-9951
- Mfr. Part No.:
- SIR5607DP-T1-RE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 90.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SiR | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.007Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 112nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 90.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SiR | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.007Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 112nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Length 5.15mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Less voltage drop
Reduces conduction loss
Fully lead (Pb)-free device
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