Vishay SiSS5623DN Type P-Channel MOSFET, 36.3 A, 60 V Enhancement, 8-Pin 1212-8S SISS5623DN-T1-GE3

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Subtotal (1 pack of 4 units)*

Kr.100 44 

(exc. VAT)

Kr.125 56 

(inc. VAT)

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Units
Per unit
Per Pack*
4 - 56Kr. 25,11Kr. 100,44
60 - 96Kr. 24,08Kr. 96,32
100 - 236Kr. 21,308Kr. 85,23
240 - 996Kr. 20,935Kr. 83,74
1000 +Kr. 20,563Kr. 82,25

*price indicative

Packaging Options:
RS Stock No.:
280-0001
Mfr. Part No.:
SISS5623DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

36.3A

Maximum Drain Source Voltage Vds

60V

Package Type

1212-8S

Series

SiSS5623DN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.046Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

56.8W

Typical Gate Charge Qg @ Vgs

10.1nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

New generation power MOSFET

100 percent Rg and UIS tested

Ultra low RDS x Qg FOM product

Fully lead (Pb)-free device

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