Infineon OptiMOS 3 Type N-Channel MOSFET, 42 A, 100 V Enhancement, 8-Pin TDSON BSC160N10NS3GATMA1

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Kr.90 97 

(exc. VAT)

Kr.113 71 

(inc. VAT)

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Packaging Options:
RS Stock No.:
825-9250
Mfr. Part No.:
BSC160N10NS3GATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

42A

Maximum Drain Source Voltage Vds

100V

Package Type

TDSON

Series

OptiMOS 3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

33mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

60W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5.35mm

Height

1.1mm

Width

6.35 mm

Automotive Standard

No

Infineon OptiMOS™ 3 Series MOSFET, 42A Maximum Continuous Drain Current, 60W Maximum Power Dissipation - BSC160N10NS3GATMA1


This MOSFET is engineered for efficiency and durability across a variety of applications. It serves as a fundamental component in power management systems, excelling in switching applications, making it suitable for automation and electrical sectors. Its impressive features, including high continuous drain current and low on-state resistance, optimise performance in various environments, ensuring strength and efficiency.

Features & Benefits


• Supports a continuous drain current of 42A for high-power tasks

• Operates at a maximum drain-source voltage of 100V for broad application use

• Exhibits low on-state resistance of 33mΩ, enhancing energy efficiency

• Designed with a surface mount configuration for simple circuit integration

• Functions in high temperature environments, up to +150°C

• Utilises a single N-channel configuration for improved stability

Applications


• Employed in power supplies and converters for effective energy management

• Suitable for that require Compact and efficient power devices

• Utilised in motor control systems for enhanced response times

• Ideal for telecommunications systems needing robust power capabilities

• Commonly applied in renewable energy systems for efficient power conversion

What are the thermal limits for operating this device?


The device operates within a temperature range of -55°C to +150°C, suitable for various environmental conditions.

How can the low on-state resistance benefit my circuit design?


The low on-state resistance reduces power loss during operation, improving the efficiency of your circuit and decreasing heat generation.

Is there a specific mounting method required for this MOSFET?


This MOSFET features a surface mount design, facilitating straightforward integration into printed circuit boards.

Can this MOSFET be used for pulsed applications?


Yes, it can accommodate pulsed currents of up to 168A, making it apt for applications involving transient loads.

What safety features should I consider during installation?


It is important to manage the gate-source voltage within the specified range of -20V to +20V to prevent damage, while ensuring compliance with thermal resistance ratings for optimal performance.

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