Infineon IKW50N65RH5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3
- RS Stock No.:
- 249-6940
- Mfr. Part No.:
- IKW50N65RH5XKSA1
- Brand:
- Infineon
Subtotal (1 tube of 30 units)*
Kr.1 136 67
(exc. VAT)
Kr.1 420 83
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 210 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | Kr. 37,889 | Kr. 1 136,67 |
*price indicative
- RS Stock No.:
- 249-6940
- Mfr. Part No.:
- IKW50N65RH5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 50 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | 15V | |
| Maximum Power Dissipation | 305 W | |
| Number of Transistors | 2 | |
| Package Type | PG-TO247-3 | |
| Configuration | Single | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage 15V | ||
Maximum Power Dissipation 305 W | ||
Number of Transistors 2 | ||
Package Type PG-TO247-3 | ||
Configuration Single | ||
The Infineon TRENCHSTOP5 H5 IGBT co-packed with half-rated 6th generation CoolSiCTM schottky barrier diode. Ultra-low switching losses due to the combination of TRENCHSTOPTM5 and CoolSiCTM technology. Benchmark efficiency in hard switching topologies. Plug-and-play replacement of pure silicon devices. Maximum junction temperature is 175°C
Industrial Power Supplies
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Energy Generation
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Energy Distribution - Energy Storage
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Industrial SMPS
Energy Generation
Solar String Inverter
Energy Distribution - Energy Storage
Infrastructure Charge - Charger
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