Bourns BIDD05N60T Single Diode IGBT, 5 A 600 V TO-252

View all IGBTs

Subtotal (1 reel of 2500 units)*

Kr.16 295 00 

(exc. VAT)

Kr.20 370 00 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 25. mai 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2500 +Kr. 6,518Kr. 16 295,00

*price indicative

RS Stock No.:
253-3499
Mfr. Part No.:
BIDD05N60T
Brand:
Bourns
Find similar products by selecting one or more attributes.
Select all

Brand

Bourns

Maximum Continuous Collector Current

5 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±30V

Number of Transistors

1

Maximum Power Dissipation

82 W

Package Type

TO-252

Configuration

Single Diode

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure improves the robustness of the device.

600V, 5A, Low VCE(sat)
Trench-Gate Field-Stop technology
Optimized for conduction
Robust
RoHS compliant

Related links