Infineon HEXFET Type N-Channel MOSFET, 129 A, 135 V Enhancement, 3-Pin TO-263 IRF135S203

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Subtotal (1 pack of 2 units)*

Kr.55 37 

(exc. VAT)

Kr.69 212 

(inc. VAT)

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2 +Kr. 27,685Kr. 55,37

*price indicative

Packaging Options:
RS Stock No.:
130-0937
Mfr. Part No.:
IRF135S203
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

129A

Maximum Drain Source Voltage Vds

135V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

180nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

441W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Height

9.65mm

Standards/Approvals

No

Length

10.67mm

Width

4.83 mm

Automotive Standard

No

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