Infineon HEXFET Type N-Channel MOSFET, 129 A, 135 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

Kr.13 121 60 

(exc. VAT)

Kr.16 401 60 

(inc. VAT)

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Units
Per unit
Per Reel*
800 - 800Kr. 16,402Kr. 13 121,60
1600 +Kr. 15,582Kr. 12 465,60

*price indicative

RS Stock No.:
168-5948
Mfr. Part No.:
IRF135S203
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

129A

Maximum Drain Source Voltage Vds

135V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.4mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

180nC

Maximum Power Dissipation Pd

441W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Height

9.65mm

Length

10.67mm

Width

4.83 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

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