Infineon HEXFET Type N-Channel MOSFET, 82 A, 75 V, 3-Pin TO-263 IRF2807STRLPBF

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

Kr.168 85 

(exc. VAT)

Kr.211 06 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 850 unit(s) ready to ship
  • Plus 2 550 unit(s) shipping from 01. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 40Kr. 16,885Kr. 168,85
50 - 90Kr. 16,05Kr. 160,50
100 - 240Kr. 15,364Kr. 153,64
250 - 490Kr. 14,689Kr. 146,89
500 +Kr. 13,671Kr. 136,71

*price indicative

Packaging Options:
RS Stock No.:
214-4444
Mfr. Part No.:
IRF2807STRLPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

82A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

13mΩ

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

160nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

230W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Distrelec Product Id

304-39-413

Automotive Standard

No

This Infineon HEXFET Power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides reliable and efficient device

It is fully avalanche rated

Related links