Infineon HEXFET Type N-Channel MOSFET, 6 A, 500 V, 3-Pin TO-252 IRFR825TRPBF

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Subtotal (1 pack of 15 units)*

Kr. 313,905

(exc. VAT)

Kr. 392,385

(inc. VAT)

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Units
Per unit
Per Pack*
15 - 60Kr. 20,927Kr. 313,91
75 - 135Kr. 19,875Kr. 298,13
150 - 360Kr. 19,036Kr. 285,54
375 - 735Kr. 18,213Kr. 273,20
750 +Kr. 16,939Kr. 254,09

*price indicative

Packaging Options:
RS Stock No.:
218-3116
Mfr. Part No.:
IRFR825TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

500V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.3Ω

Maximum Power Dissipation Pd

119W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

34nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

9.65mm

Length

10.67mm

Automotive Standard

No

The Infineon HEXFET series single N-channel power MOSFET integrated with DPAK (TO-252) type package. This MOSFET is mainly used in UPS, SMPS etc.

Lower gate charge results in simpler drive requirements.

Higher gate voltage threshold offers improved noise immunity.

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