Infineon HEXFET Type N-Channel MOSFET, 26 A, 200 V Enhancement, 3-Pin TO-220 IRFI4227PBF

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Subtotal (1 pack of 2 units)*

Kr.78 95 

(exc. VAT)

Kr.98 688 

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 18Kr. 39,475Kr. 78,95
20 - 48Kr. 35,805Kr. 71,61
50 - 98Kr. 33,52Kr. 67,04
100 - 198Kr. 31,175Kr. 62,35
200 +Kr. 28,77Kr. 57,54

*price indicative

Packaging Options:
RS Stock No.:
262-6757
Mfr. Part No.:
IRFI4227PBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.036Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Standards/Approvals

No

Automotive Standard

No

Distrelec Product Id

304-41-674

The Infineon power MOSFET is specifically designed for sustain energy recovery and pass switch applications in plasma display panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating.

150 degree Celsius operating junction temperature

High repetitive peak current capability

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