Vishay Isolated TrenchFET 2 Type N-Channel MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SOIC SI9945BDY-T1-GE3

Stock information currently inaccessible
Packaging Options:
RS Stock No.:
787-8995
Distrelec Article No.:
304-02-278
Mfr. Part No.:
SI9945BDY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5.3A

Maximum Drain Source Voltage Vds

60V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

72mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

13nC

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

3.1W

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Standards/Approvals

No

Width

4mm

Height

1.5mm

Length

5mm

Number of Elements per Chip

2

Automotive Standard

No

Dual N-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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