STMicroelectronics IGBT, 80 A 650 V, 3-Pin TO-247

RS Stock No.:: 261-5071
Mfr. Part No.:: STGWA80H65DFBAG
Brand:: STMicroelectronics

STMicroelectronics IGBT, 80 A 650 V, 3-Pin TO-247

Bulk discount available

Subtotal (1 tube of 30 units)*

Kr. 1 609,95

(exc. VAT)

Kr. 2 012,43

(inc. VAT)

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Units	Per unit	Per Tube*
30 - 30	Kr. 53,665	Kr. 1 609,95
60 - 60	Kr. 52,269	Kr. 1 568,07
90 +	Kr. 50,98	Kr. 1 529,40

*price indicative

RS Stock No.:: 261-5071
Mfr. Part No.:: STGWA80H65DFBAG
Brand:: STMicroelectronics

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	STMicroelectronics
	Maximum Continuous Collector Current Ic	80A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	535W
	Package Type	TO-247
	Pin Count	3
	Maximum Collector Emitter Saturation Voltage VceSAT	15V
	Minimum Operating Temperature	-55°C
	Maximum Gate Emitter Voltage VGEO	±20 V
	Maximum Operating Temperature	175°C
	Width	21 mm
	Length	15.8mm
	Standards/Approvals	No
	Series	STGWA
	Height	5mm
	Automotive Standard	No

	Select all
	Brand STMicroelectronics
	Maximum Continuous Collector Current Ic 80A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 535W
	Package Type TO-247
	Pin Count 3
	Maximum Collector Emitter Saturation Voltage VceSAT 15V
	Minimum Operating Temperature -55°C
	Maximum Gate Emitter Voltage VGEO ±20 V
	Maximum Operating Temperature 175°C
	Width 21 mm
	Length 15.8mm
	Standards/Approvals No
	Series STGWA
	Height 5mm
	Automotive Standard No

Datasheet - STGWA80H65DFBAG

COO (Country of Origin):: CN

The STMicroelectronics IGBT is developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

AEC-Q101 qualified

High-speed switching series

Maximum junction temperature TJ is 175 degree C

Minimized tail current

Tight parameter distribution

Positive temperature VCE(sat) coefficient

Soft and very fast recovery antiparallel diode

STMicroelectronics IGBT, 80 A 650 V, 3-Pin TO-247

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