STMicroelectronics SCT Type N-Channel Power MOSFET, 30 A, 1200 V Enhancement, 7-Pin HU3PAK SCT070HU120G3AG

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Subtotal (1 reel of 600 units)*

Kr.108 516 00 

(exc. VAT)

Kr.135 648 00 

(inc. VAT)

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Per Reel*
600 +Kr. 180,86Kr. 108 516,00

*price indicative

RS Stock No.:
215-241
Mfr. Part No.:
SCT070HU120G3AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

1200V

Package Type

HU3PAK

Series

SCT

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

63mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

37nC

Maximum Power Dissipation Pd

23W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

18.58mm

Standards/Approvals

RoHS

Height

3.5mm

Width

14 mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
JP
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

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