STMicroelectronics SCT MOSFET, 55 A, 1200 V H2PAK-7 SCT025H120G3-7

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Subtotal (1 reel of 1000 units)*

Kr.228 446 00 

(exc. VAT)

Kr.285 558 00 

(inc. VAT)

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1000 +Kr. 228,446Kr. 228 446,00

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RS Stock No.:
365-165
Mfr. Part No.:
SCT025H120G3-7
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

1200V

Series

SCT

Package Type

H2PAK-7

Mount Type

Surface

Maximum Drain Source Resistance Rds

27mΩ

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

375W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

AEC-Q101 qualified

Very low RDS(on) over the entire temperature range

High speed switching performances

Very fast and robust intrinsic body diode

Source sensing pin for increased efficiency

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