Infineon BSC070N10NS5 Type N-Channel MOSFET, 80 A, 80 V Enhancement, 8-Pin TDSON BSC070N10NS5ATMA1
- RS Stock No.:
- 171-1963
- Mfr. Part No.:
- BSC070N10NS5ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.115 38
(exc. VAT)
Kr.144 22
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 4 200 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | Kr. 11,538 | Kr. 115,38 |
| 50 - 90 | Kr. 9,23 | Kr. 92,30 |
| 100 - 240 | Kr. 8,654 | Kr. 86,54 |
| 250 - 490 | Kr. 8,077 | Kr. 80,77 |
| 500 + | Kr. 7,50 | Kr. 75,00 |
*price indicative
- RS Stock No.:
- 171-1963
- Mfr. Part No.:
- BSC070N10NS5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | BSC070N10NS5 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 5.49mm | |
| Standards/Approvals | No | |
| Width | 6.35 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series BSC070N10NS5 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 5.49mm | ||
Standards/Approvals No | ||
Width 6.35 mm | ||
Automotive Standard No | ||
The Infineon BSC070N10NS5 is the 100V OptiMOS 5 power MOSFET in TOLL. This MOSFET is optimized for synchronous rectification and Ideal for high switching frequency. This MOSFET have highest system efficiency and reduced switching and conduction losses.
Optimized for high performance SMPS
100% avalanche tested
Superior thermal resistance
N-channel
Related links
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 8-Pin TDSON BSC070N10NS5ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 3-Pin TO-220 IPP052N08N5AKSA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 3-Pin D2PAK IPB049N08N5ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 8-Pin TDSON BSC040N08NS5ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 8-Pin TDSON BSC030N08NS5ATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 8-Pin TDSON BSC047N08NS3GATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 8-Pin TDSON BSC123N08NS3GATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 8-Pin TDSON BSC340N08NS3GATMA1
