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Discrete Semiconductors

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N-Channel MOSFET Transistor, 135 A, 100 V PG-TO263-3 Infineon IPB043N10NF2SATMA1
  • kr 20,11
    Each (In a Pack of 2)
  • Also available in industry standard packaging
N-Channel MOSFET Transistor, 135 A, 100 V PG-TO263-3 Infineon IPB043N10NF2SATMA1
  • Channel TypeN
  • Maximum Continuous Drain Current135 A
  • Maximum Drain Source Voltage100 V
  • Package TypePG-TO263-3
  • Mounting TypeSurface Mount
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Infineon IKWH30N65WR6XKSA1 Single IGBT, 30 A 650 V, 3-Pin TO-247-3-HCC, Through Hole
  • kr 24,101
    Each (In a Tube of 30)
Infineon IKWH30N65WR6XKSA1 Single IGBT, 30 A 650 V, 3-Pin TO-247-3-HCC, Through Hole
  • Maximum Continuous Collector Current30 A
  • Maximum Collector Emitter Voltage650 V
  • Maximum Gate Emitter Voltage±20V
  • Maximum Power Dissipation83 W
  • Number of Transistors1
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Infineon ESD5V5U5ULCE6327HTSA1, Quint-Element Uni-Directional TVS Diode, 6-Pin SC-74
  • kr 3,519
    Each (In a Pack of 100)
  • Also available in industry standard packaging
Infineon ESD5V5U5ULCE6327HTSA1, Quint-Element Uni-Directional TVS Diode, 6-Pin SC-74
  • Diode ConfigurationComplex Array
  • Direction TypeUni-Directional
  • Maximum Clamping Voltage9.2V
  • Mounting TypeSurface Mount
  • Package TypeSC-74
See similar products in TVS Diodes
N-Channel MOSFET, 17 A, 800 V, 3-Pin TO-247 Infineon SPW17N80C3FKSA1
  • kr 53,88Each
  • Also available in industry standard packaging
N-Channel MOSFET, 17 A, 800 V, 3-Pin TO-247 Infineon SPW17N80C3FKSA1
  • Channel TypeN
  • Maximum Continuous Drain Current17 A
  • Maximum Drain Source Voltage800 V
  • Package TypeTO-247
  • SeriesCoolMOS™ C3
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Dual Silicon N-Channel MOSFET, 5.1 A, 55 V, 4-Pin SOT-223 Infineon IRFL024ZTRPBF
  • kr 6,296
    Each (In a Pack of 25)
  • Also available in industry standard packaging
Dual Silicon N-Channel MOSFET, 5.1 A, 55 V, 4-Pin SOT-223 Infineon IRFL024ZTRPBF
  • Channel TypeN
  • Maximum Continuous Drain Current5.1 A
  • Maximum Drain Source Voltage55 V
  • SeriesHEXFET
  • Package TypeSOT-223
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N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK Infineon IPD90N03S4L02ATMA1
  • kr 23,198
    Each (In a Pack of 5)
  • Also available in industry standard packaging
N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK Infineon IPD90N03S4L02ATMA1
  • Channel TypeN
  • Maximum Continuous Drain Current90 A
  • Maximum Drain Source Voltage30 V
  • Package TypeDPAK (TO-252)
  • SeriesOptiMOS™ -T2
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P-Channel MOSFET Transistor & Diode, 90 A, 30 V, 3-Pin DPAK Infineon IPD90P03P4L04ATMA2
  • kr 7,023
    Each (On a Reel of 2500)
P-Channel MOSFET Transistor & Diode, 90 A, 30 V, 3-Pin DPAK Infineon IPD90P03P4L04ATMA2
  • Channel TypeP
  • Maximum Continuous Drain Current90 A
  • Maximum Drain Source Voltage30 V
  • SeriesOptiMOS™
  • Package TypeTO-252
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Infineon BAR6502VH6327XTSA1 PIN Diode, 100mA, 30V
  • kr 0,644
    Each (On a Reel of 3000)
Infineon BAR6502VH6327XTSA1 PIN Diode, 100mA, 30V
  • Diode ConfigurationSingle
  • ApplicationSwitch
  • Maximum Forward Current100mA
  • Maximum Reverse Voltage30V
  • Typical Carrier Life Time80ns
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N-Channel MOSFET, 45 A, 40 V, 8-Pin SuperSO8 5 x 6 Infineon IAUC45N04S6L063HATMA1
  • kr 5,464
    Each (On a Reel of 5000)
N-Channel MOSFET, 45 A, 40 V, 8-Pin SuperSO8 5 x 6 Infineon IAUC45N04S6L063HATMA1
  • Channel TypeN
  • Maximum Continuous Drain Current45 A
  • Maximum Drain Source Voltage40 V
  • Package TypeSuperSO8 5 x 6
  • Mounting TypeSurface Mount
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Infineon ESD103B102ELSE6327XTSA1, Bi-Directional ESD Protection Diode, 2-Pin TSSLP
  • kr 1,224
    Each (On a Reel of 250)
Infineon ESD103B102ELSE6327XTSA1, Bi-Directional ESD Protection Diode, 2-Pin TSSLP
  • Diode ConfigurationSingle
  • Direction TypeBi-Directional
  • Maximum Clamping Voltage48V
  • Mounting TypeSurface Mount
  • Package TypeTSSLP
See similar products in TVS Diodes
N-Channel MOSFET, 13.3 A, 950 V, 3-Pin D2PAK Infineon IPB95R450PFD7ATMA1
  • kr 15,465
    Each (On a Reel of 1000)
N-Channel MOSFET, 13.3 A, 950 V, 3-Pin D2PAK Infineon IPB95R450PFD7ATMA1
  • Channel TypeN
  • Maximum Continuous Drain Current13.3 A
  • Maximum Drain Source Voltage950 V
  • Package TypeTO-263
  • Pin Count3
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Infineon FS380R12A6T4BBPSA1 IGBT Module, 760 A 1200 V, 33-Pin AG-HYBRIDD-1
  • kr 6 768,43Each
  • Also available in industry standard packaging
Infineon FS380R12A6T4BBPSA1 IGBT Module, 760 A 1200 V, 33-Pin AG-HYBRIDD-1
  • Maximum Continuous Collector Current760 A
  • Maximum Collector Emitter Voltage1200 V
  • Maximum Gate Emitter Voltage+/-20V
  • Number of Transistors6
  • Package TypeAG-HYBRIDD-1
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N-Channel MOSFET, 79 A, 100 V, 8-Pin TDSON Infineon BSC070N10LS5ATMA1
  • kr 7,67
    Each (On a Reel of 5000)
N-Channel MOSFET, 79 A, 100 V, 8-Pin TDSON Infineon BSC070N10LS5ATMA1
  • Channel TypeN
  • Maximum Continuous Drain Current79 A
  • Maximum Drain Source Voltage100 V
  • Package TypeTDSON
  • Mounting TypeSurface Mount
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N-Channel MOSFET Transistor & Diode, 12 A, 40 V, 3-Pin D2PAK Infineon IPB015N04NGATMA1
  • kr 16,549
    Each (On a Reel of 1000)
N-Channel MOSFET Transistor & Diode, 12 A, 40 V, 3-Pin D2PAK Infineon IPB015N04NGATMA1
  • Channel TypeN
  • Maximum Continuous Drain Current12 A
  • Maximum Drain Source Voltage40 V
  • Package TypeD2PAK (TO-263)
  • SeriesOptiMOS™ 3
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N-Channel MOSFET, 80 A, 80 V, 3-Pin TO-220 Infineon IPP052N08N5AKSA1
  • kr 7,866
    Each (In a Tube of 50)
N-Channel MOSFET, 80 A, 80 V, 3-Pin TO-220 Infineon IPP052N08N5AKSA1
  • Channel TypeN
  • Maximum Continuous Drain Current80 A
  • Maximum Drain Source Voltage80 V
  • SeriesOptiMOS™ 5
  • Package TypeTO-220
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N-Channel MOSFET, 119 A, 40 V, 8-Pin TDSON Infineon BSC026N04LSATMA1
  • kr 4,279
    Each (In a Pack of 15)
  • Also available in industry standard packaging
N-Channel MOSFET, 119 A, 40 V, 8-Pin TDSON Infineon BSC026N04LSATMA1
  • Channel TypeN
  • Maximum Continuous Drain Current119 A
  • Maximum Drain Source Voltage40 V
  • SeriesOptiMOS™
  • Package TypeTDSON
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Infineon IKA15N65ET6XKSA2 Single IGBT, 34 A 650 V, 3-Pin PG-TO220
  • kr 10,684
    Each (In a Tube of 50)
Infineon IKA15N65ET6XKSA2 Single IGBT, 34 A 650 V, 3-Pin PG-TO220
  • Maximum Continuous Collector Current34 A
  • Maximum Collector Emitter Voltage650 V
  • Maximum Gate Emitter Voltage30V
  • Number of Transistors1
  • Maximum Power Dissipation35.3 W
See similar products in IGBTs
N-Channel MOSFET, 18 A, 40 V, 8-Pin SOIC Infineon IRF7842TRPBF
  • kr 7,681
    Each (On a Reel of 4000)
N-Channel MOSFET, 18 A, 40 V, 8-Pin SOIC Infineon IRF7842TRPBF
  • Channel TypeN
  • Maximum Continuous Drain Current18 A
  • Maximum Drain Source Voltage40 V
  • Package TypeSOIC
  • SeriesHEXFET
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Infineon FP50R06KE3BPSA1 IGBT 600 V AG-ECONO2C-311
  • kr 1 251,905
    Each (In a Tray of 15)
Infineon FP50R06KE3BPSA1 IGBT 600 V AG-ECONO2C-311
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±20.0V
  • Package TypeAG-ECONO2C-311
See similar products in IGBTs
N-Channel MOSFET, 136 A, 80 V, 8-Pin SuperSO8 5 x 6 Infineon BSC037N08NS5TATMA1
  • kr 11,753
    Each (On a Reel of 5000)
N-Channel MOSFET, 136 A, 80 V, 8-Pin SuperSO8 5 x 6 Infineon BSC037N08NS5TATMA1
  • Channel TypeN
  • Maximum Continuous Drain Current136 A
  • Maximum Drain Source Voltage80 V
  • Package TypeSuperSO8 5 x 6
  • Mounting TypeSurface Mount
See similar products in MOSFETs
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